NTE635

Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• Diode Type:Avalanche
• Voltage - DC Reverse (Vr) (Max):400 V
• Current - Average Rectified (Io):1.9A
• Voltage - Forward (Vf) (Max) @ If:1.05 V @ 2 A
• Speed:Fast Recovery =< 500ns, > 200mA (Io)

• Reverse Recovery Time (trr):50 ns
• Current - Reverse Leakage @ Vr:5 µA @ 400 V
• Capacitance @ Vr, F:80pF @ 0V, 1MHz
• Mounting Type:Through Hole
• Package / Case:SOD-57, Axial
• Supplier Device Package:SOD-57
• Operating Temperature - Junction:-65°C ~ 175°C