JANTXV1N5809US
Microchip Technology- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionDIODE GEN PURP 100V 3A B-MELF
- CategoryDiodes - Rectifiers - Single
- Datasheet JANTXV1N5809US Datasheet
-
ECAD Model
- Share
In Stock: 164
Can ship immediately
Pricing:
- 1$10.17008
- 100$10.17008
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Technical Details
- Series:Military, MIL-PRF-19500/477
- Package:Bulk
- Part Status:Active
- Diode Type:Standard
- Voltage - DC Reverse (Vr) (Max):100 V
- Current - Average Rectified (Io):3A
- Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):30 ns
- Current - Reverse Leakage @ Vr:5 µA @ 100 V
- Capacitance @ Vr, F:60pF @ 10V, 1MHz
- Mounting Type:Surface Mount
- Package / Case:SQ-MELF, B
- Supplier Device Package:B, SQ-MELF
- Operating Temperature - Junction:-65°C ~ 175°C
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