1N8032-GA

Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):650 V
• Current - Average Rectified (Io):2.5A
• Voltage - Forward (Vf) (Max) @ If:1.3 V @ 2.5 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:5 µA @ 650 V
• Capacitance @ Vr, F:274pF @ 1V, 1MHz
• Mounting Type:Through Hole
• Package / Case:TO-257-3
• Supplier Device Package:TO-257
• Operating Temperature - Junction:-55°C ~ 250°C