GB10SLT12-252

GeneSiC Semiconductor
In Stock: 180

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:2 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)

 

  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:250 µA @ 1200 V
  • Capacitance @ Vr, F:520pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Operating Temperature - Junction:-55°C ~ 175°C

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