MBRH20045RL

GeneSiC Semiconductor
In Stock: 136

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Diode Type:Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io):200A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)

 

  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 45 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Chassis Mount
  • Package / Case:D-67
  • Supplier Device Package:D-67
  • Operating Temperature - Junction:-55°C ~ 150°C

Related Products


UH6PDHM3_A/H

DIODE GEN PURP 200V 6A TO277A

UH6PDHM3_A/H Datasheet

Call for price


UH6PDHM3_A/I

DIODE GEN PURP 200V 6A TO277A

UH6PDHM3_A/I Datasheet

Call for price


NS8ATHE3_A/P

DIODE GEN PURP 50V 8A TO220AC

NS8ATHE3_A/P Datasheet

Call for price


NS8BTHE3_A/P

DIODE GEN PURP 100V 8A TO220AC

NS8BTHE3_A/P Datasheet

Call for price


NS8DTHE3_A/P

DIODE GEN PURP 200V 8A TO220AC

NS8DTHE3_A/P Datasheet

Call for price


NS8GTHE3_A/P

DIODE GEN PURP 400V 8A TO220AC

NS8GTHE3_A/P Datasheet

Call for price


NS8JTHE3_A/P

DIODE GEN PURP 600V 8A TO220AC

NS8JTHE3_A/P Datasheet

Call for price


NS8KTHE3_A/P

DIODE GEN PURP 800V 8A TO220AC

NS8KTHE3_A/P Datasheet

Call for price


NS8MTHE3_A/P

DIODE GEN PURP 1KV 8A TO220AC

NS8MTHE3_A/P Datasheet

Call for price


VS-30EPH06P-S1

DIODE GEN PURP 600V 30A TO247AC

Call for price


Top