CSICD10-1200 BK

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):1200 V
• Current - Average Rectified (Io):10A
• Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:250 µA @ 1200 V
• Capacitance @ Vr, F:500pF @ 1V, 1MHz
• Mounting Type:Surface Mount
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK
• Operating Temperature - Junction:-55°C ~ 175°C