Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics
Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics
SiC MOSFETsDesign of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics
SiC MOSFETs