HN1B04F(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS NPN/PNP 30V 0.5A SM6
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet HN1B04F(TE85L,F) Datasheet
-
ECAD Model
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In Stock: 133
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Pricing:
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:NPN, PNP
- Current - Collector (Ic) (Max):500mA
- Voltage - Collector Emitter Breakdown (Max):30V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
- Power - Max:300mW
- Frequency - Transition:200MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-74, SOT-457
- Supplier Device Package:SM6
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