MT3S113(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionRF TRANS NPN 5.3V 12.5GHZ SMINI
- CategoryTransistors - Bipolar (BJT) - RF
- Datasheet MT3S113(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 5,987
Can ship immediately
Pricing:
- 1$0.7
- 3,000$0.28
- 6,000$0.266
- 15,000$0.255
- 30,000$0.248
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN
- Voltage - Collector Emitter Breakdown (Max):5.3V
- Frequency - Transition:12.5GHz
- Noise Figure (dB Typ @ f):1.45dB @ 1GHz
- Gain:11.8dB
- Power - Max:800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
- Current - Collector (Ic) (Max):100mA
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:S-Mini
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