APTGTQ100A65T1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• IGBT Type:-
• Configuration:Half Bridge
• Voltage - Collector Emitter Breakdown (Max):650 V
• Current - Collector (Ic) (Max):100 A
• Power - Max:250 W
• Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A

• Current - Collector Cutoff (Max):100 µA
• Input Capacitance (Cies) @ Vce:6 nF @ 25 V
• Input:Standard
• NTC Thermistor:Yes
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:SP1