PDTB123ES,126
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS PNP 500MW TO92-3
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet PDTB123ES,126 Datasheet
-
ECAD Model
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Technical Details
- Series:-
- Package:Tape & Box (TB)
- Part Status:Obsolete
- Transistor Type:PNP - Pre-Biased
- Current - Collector (Ic) (Max):500 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):2.2 kOhms
- Resistor - Emitter Base (R2):2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:500 mW
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package:TO-92-3
