NGTB25N120FL2WG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB25N120FL2WG Datasheet
-
ECAD Model
- Share
In Stock: 1,924
Can ship immediately
Pricing:
- 1$2.67
- 30$2.28233
- 120$1.98918
- 510$1.7058
- 1,020$1.45174
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:Field Stop
- Voltage - Collector Emitter Breakdown (Max):1.2 V
- Current - Collector (Ic) (Max):50 A
- Current - Collector Pulsed (Icm):100 A
- Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 25A
- Power - Max:385 W
- Switching Energy:1.95mJ (on), 600µJ (off)
- Input Type:Standard
- Gate Charge:178 nC
- Td (on/off) @ 25°C:87ns/179ns
- Test Condition:600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr):154 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247-3
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