NGTB75N65FL2WAG
Rochester Electronics- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB75N65FL2WAG Datasheet
-
ECAD Model
- Share
In Stock: 150
Can ship immediately
Pricing:
- 1$2.78
- 150$2.78
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- IGBT Type:Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):200 A
- Current - Collector Pulsed (Icm):200 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
- Power - Max:536 W
- Switching Energy:610µJ (on), 1.2mJ (off)
- Input Type:Standard
- Gate Charge:310 nC
- Td (on/off) @ 25°C:23ns/157ns
- Test Condition:400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr):90 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Supplier Device Package:TO-247-4L
Related Products
FD300R07 - IGBT MODULE
- 1: $141.86000
FF300R17 - IGBT MODULE
- 1: $155.66000
INSULATED GATE BIPOLAR TRANSISTO
- 1: $585.46000
INSULATED GATE BIPOLAR TRANSISTO
- 1: $854.89000
INSULATED GATE BIPOLAR TRANSISTO
- 1: $866.47000
