APT68GA60B2D40

Technical Details

• Series:POWER MOS 8™
• Package:Tube
• Part Status:Active
• IGBT Type:PT
• Voltage - Collector Emitter Breakdown (Max):600 V
• Current - Collector (Ic) (Max):121 A
• Current - Collector Pulsed (Icm):202 A
• Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 40A
• Power - Max:520 W
• Switching Energy:715µJ (on), 607µJ (off)

• Input Type:Standard
• Gate Charge:198 nC
• Td (on/off) @ 25°C:21ns/133ns
• Test Condition:400V, 40A, 4.7Ohm, 15V
• Reverse Recovery Time (trr):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3 Variant
• Supplier Device Package:-