IXBT32N300HV

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):3000 V
• Current - Collector (Ic) (Max):80 A
• Current - Collector Pulsed (Icm):280 A
• Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 32A
• Power - Max:400 W
• Switching Energy:-

• Input Type:Standard
• Gate Charge:142 nC
• Td (on/off) @ 25°C:50ns/160ns
• Test Condition:1250V, 32A, 2Ohm, 15V
• Reverse Recovery Time (trr):1500 ns
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268HV