SSM6N58NU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 4A UDFN6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6N58NU,LF Datasheet
-
ECAD Model
- Share
In Stock: 20,596
Can ship immediately
Pricing:
- 1$0.48
- 3,000$0.12807
- 6,000$0.12031
- 15,000$0.11254
- 30,000$0.10866
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:4A
- Rds On (Max) @ Id, Vgs:84mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:129pF @ 15V
- Power - Max:1W
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-WDFN Exposed Pad
- Supplier Device Package:6-UDFN (2x2)
