SIA910EDJ-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 12V 4.5A SC-70-6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SIA910EDJ-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 22,788
Can ship immediately
Pricing:
- 1$0.62
- 3,000$0.26272
- 6,000$0.24568
- 15,000$0.23715
- 30,000$0.2325
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):12V
- Current - Continuous Drain (Id) @ 25°C:4.5A
- Rds On (Max) @ Id, Vgs:28mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:455pF @ 6V
- Power - Max:7.8W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6 Dual
- Supplier Device Package:PowerPAK® SC-70-6 Dual
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