SI3900DV-T1-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 20V 2A 6-TSOP
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI3900DV-T1-E3 Datasheet
-
ECAD Model
- Share
In Stock: 52,587
Can ship immediately
Pricing:
- 1$0.69
- 3,000$0.29239
- 6,000$0.27341
- 15,000$0.26392
- 30,000$0.25875
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:2A
- Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:830mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:6-TSOP
