EPC2102

Technical Details

• Series:eGaN®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:23A
• Rds On (Max) @ Id, Vgs:4.4mOhm @ 20A, 5V

• Vgs(th) (Max) @ Id:2.5V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:830pF @ 30V
• Power - Max:-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die