STS10DN3LH5

Technical Details

• Series:STripFET™ V
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:10A
• Rds On (Max) @ Id, Vgs:21mOhm @ 5A, 10V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:475pF @ 25V
• Power - Max:2.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO