BSC0911NDATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 25V 18A/30A TISON8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSC0911NDATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 6,740
Can ship immediately
Pricing:
- 1$1.84
- 5,000$0.84094
- 10,000$0.8233
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual) Asymmetrical
- FET Feature:Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss):25V
- Current - Continuous Drain (Id) @ 25°C:18A, 30A
- Rds On (Max) @ Id, Vgs:3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 12V
- Power - Max:1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:PG-TISON-8
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