SI3900DV-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:2A
• Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:830mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-TSOP