NTMD6N04R2G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):40V
• Current - Continuous Drain (Id) @ 25°C:4.6A
• Rds On (Max) @ Id, Vgs:34mOhm @ 5.8A, 10V

• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:900pF @ 32V
• Power - Max:1.29W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC