NTMFD4C88NT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet NTMFD4C88NT1G Datasheet
-
ECAD Model
- Share
In Stock: 7,611
Can ship immediately
Pricing:
- 1$1.74
- 1,500$1.74
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual) Asymmetrical
- FET Feature:Standard
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:11.7A, 14.2A
- Rds On (Max) @ Id, Vgs:5.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1252pF @ 15V
- Power - Max:1.1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:8-DFN (5x6)
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