CSD86311W1723

Technical Details

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:4.5A
• Rds On (Max) @ Id, Vgs:39mOhm @ 2A, 8V

• Vgs(th) (Max) @ Id:1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:585pF @ 12.5V
• Power - Max:1.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:12-UFBGA, DSBGA
• Supplier Device Package:12-DSBGA