SIS903DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET DUAL P-CHAN POWERPAK 1212
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SIS903DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,129
Can ship immediately
Pricing:
- 1$1.03
- 3,000$0.48373
- 6,000$0.46101
- 15,000$0.44479
Quote It
Technical Details
- Series:TrenchFET® Gen III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 P-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Rds On (Max) @ Id, Vgs:20.1mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:2565pF @ 10V
- Power - Max:2.6W (Ta), 23W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8 Dual
- Supplier Device Package:PowerPAK® 1212-8 Dual
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