QS8J1TR

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):12V
• Current - Continuous Drain (Id) @ 25°C:4.5A
• Rds On (Max) @ Id, Vgs:29mOhm @ 4.5A, 4.5V

• Vgs(th) (Max) @ Id:1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:2450pF @ 6V
• Power - Max:1.5W
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:TSMT8