FDG6306P
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet FDG6306P Datasheet
-
ECAD Model
- Share
In Stock: 6,196
Can ship immediately
Pricing:
- 1$0.17
- 3,000$0.06222
- 6,000$0.0582
- 15,000$0.05419
- 30,000$0.05138
- 75,000$0.05109
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Technical Details
- Series:PowerTrench®
- Package:Bulk
- Part Status:Active
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:600mA
- Rds On (Max) @ Id, Vgs:420mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:114pF @ 10V
- Power - Max:300mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:SC-88 (SC-70-6)
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