SSM6N815R,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 100V 2A 6TSOPF
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6N815R,LF Datasheet
-
ECAD Model
- Share
In Stock: 423
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.15703
- 6,000$0.1469
- 15,000$0.14184
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Technical Details
- Series:U-MOSVIII-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss):100V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Rds On (Max) @ Id, Vgs:103mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:290pF @ 15V
- Power - Max:1.8W (Ta)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:6-SMD, Flat Leads
- Supplier Device Package:6-TSOP-F
