SI1965DH-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):12V
• Current - Continuous Drain (Id) @ 25°C:1.3A
• Rds On (Max) @ Id, Vgs:390mOhm @ 1A, 4.5V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds:120pF @ 6V
• Power - Max:1.25W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:SC-70-6 (SOT-363)