AOSD62666E

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
• Rds On (Max) @ Id, Vgs:14.5mOhm @ 9.5A, 10V

• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:755pF @ 30V
• Power - Max:2.5W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC