IPG20N06S2L65ATMA1

Technical Details

• Series:*
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):55V
• Current - Continuous Drain (Id) @ 25°C:20A
• Rds On (Max) @ Id, Vgs:65mOhm @ 15A, 10V

• Vgs(th) (Max) @ Id:2V @ 14µA
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:410pF @ 25V
• Power - Max:43W
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerVDFN
• Supplier Device Package:PG-TDSON-8-4