EPC2110ENGRT
EPC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGAN TRANS 2N-CH 120V BUMPED DIE
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EPC2110ENGRT Datasheet
-
ECAD Model
- Share
In Stock: 160
Can ship immediately
Pricing:
- 1$2.37
- 2,500$1.06234
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Technical Details
- Series:eGaN®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual) Common Source
- FET Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):120V
- Current - Continuous Drain (Id) @ 25°C:3.4A
- Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id:2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
- Power - Max:-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Supplier Device Package:Die
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