BSG0810NDIATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 25V 19A/39A 8TISON
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSG0810NDIATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 107
Can ship immediately
Pricing:
- 1$2.66
- 5,000$1.17409
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual) Asymmetrical
- FET Feature:Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss):25V
- Current - Continuous Drain (Id) @ 25°C:19A, 39A
- Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:1040pF @ 12V
- Power - Max:2.5W
- Operating Temperature:-55°C ~ 155°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:PG-TISON-8
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