NTMFD1D4N02P1E

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:2 N-Channel (Dual) Asymmetrical
• FET Feature:Standard
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
• Rds On (Max) @ Id, Vgs:3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V

• Vgs(th) (Max) @ Id:2V @ 250µA, 2V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs:7.2nC @ 4.5V, 21.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1180pF @ 13V, 3603pF @ 13V
• Power - Max:960mW (Ta), 1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PQFN (5x6)