IRF9953
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2P-CH 30V 2.3A 8-SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IRF9953 Datasheet
-
ECAD Model
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In Stock: 184
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:2.3A
- Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
