APTM100H80FT1G
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 4N-CH 1000V 11A SP1
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet APTM100H80FT1G Datasheet
-
ECAD Model
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In Stock: 182
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:4 N-Channel (H-Bridge)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C:11A
- Rds On (Max) @ Id, Vgs:960mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:3876pF @ 25V
- Power - Max:208W
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SP1
- Supplier Device Package:SP1
