TPC8212-H(TE12LQ,M
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 6A SOP8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet TPC8212-H(TE12LQ,M Datasheet
-
ECAD Model
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In Stock: 134
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:6A
- Rds On (Max) @ Id, Vgs:21mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:840pF @ 10V
- Power - Max:450mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package:8-SOP (5.5x6.0)
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