SI3586DV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 20V 2.9A 6-TSOP
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI3586DV-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 118
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:2.9A, 2.1A
- Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id:1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:830mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:6-TSOP
