SI4622DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 8A 8-SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI4622DY-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 132
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Technical Details
- Series:SkyFET®, TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:8A
- Rds On (Max) @ Id, Vgs:16mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:2458pF @ 15V
- Power - Max:3.3W, 3.1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
