SI4967DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2P-CH 12V 8SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI4967DY-T1-GE3 Datasheet
-
ECAD Model
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:2 P-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):12V
- Current - Continuous Drain (Id) @ 25°C:-
- Rds On (Max) @ Id, Vgs:23mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
