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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.5A, 4.9A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 5.8A, 10V

 

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO

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