RJM0306JSP-01#J0

Renesas Electronics America
In Stock: 183

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:2 N and 2 P-Channel (H-Bridge)
  • FET Feature:Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.5A
  • Rds On (Max) @ Id, Vgs:65mOhm @ 2A, 10V

 

  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:290pF @ 10V
  • Power - Max:2.2W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP

Related Products


FDMS3660S-F121

MOSFET 2N-CH 30V 13A/30A 8-PQFN

FDMS3660S-F121 Datasheet

Call for price


SI4618DY-T1-GE3

MOSFET 2N-CH 30V 8A 8SO

SI4618DY-T1-GE3 Datasheet

Call for price


SI7270DP-T1-GE3

MOSFET 2N-CH 30V 8A PPAK SO-8

SI7270DP-T1-GE3 Datasheet

Call for price


SIA915DJ-T1-GE3

MOSFET 2P-CH 30V 4.5A SC-70-6L

SIA915DJ-T1-GE3 Datasheet

Call for price


SIA920DJ-T1-GE3

MOSFET 2N-CH 8V 4.5A SC-70

SIA920DJ-T1-GE3 Datasheet

Call for price


SQJ962EP-T1-GE3

MOSFET 2N-CH 60V 8A 8SO

SQJ962EP-T1-GE3 Datasheet

Call for price


VQ1001P

MOSFET 4N-CH 30V 0.83A 14DIP

VQ1001P Datasheet

Call for price


VQ1001P-2

MOSFET 4N-CH 30V 0.83A 14DIP

VQ1001P-2 Datasheet

Call for price


VQ1001P-E3

MOSFET 4N-CH 30V 0.83A 14DIP

VQ1001P-E3 Datasheet

Call for price


VQ1006P

MOSFET 4N-CH 90V 0.4A 14DIP

VQ1006P Datasheet

Call for price


Top