DG636EEQ-T1-GE3

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• Switch Circuit:SPDT
• Multiplexer/Demultiplexer Circuit:2:1
• Number of Circuits:2
• On-State Resistance (Max):96Ohm
• Channel-to-Channel Matching (ΔRon):300mOhm
• Voltage - Supply, Single (V+):3V ~ 16V
• Voltage - Supply, Dual (V±):±3V ~ 8V

• Switch Time (Ton, Toff) (Max):46ns, 55ns
• -3db Bandwidth:700MHz
• Charge Injection:-0.33pC
• Channel Capacitance (CS(off), CD(off)):3.7pF, 4.4pF
• Current - Leakage (IS(off)) (Max):1nA
• Crosstalk:-62dB @ 1MHz
• Operating Temperature:-40°C ~ 125°C (TA)
• Mounting Type:Surface Mount
• Package / Case:16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package:16-TSSOP