MMBT5551LT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR,
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MMBT5551LT1G Datasheet
-
ECAD Model
- Share
In Stock: 4,489,494
Can ship immediately
Pricing:
- 1$0.02
- 3,000$0.00382
- 6,000$0.00346
- 15,000$0.00302
- 30,000$0.00273
- 75,000$0.00244
- 150,000$0.00206
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN
- Current - Collector (Ic) (Max):600 mA
- Voltage - Collector Emitter Breakdown (Max):160 V
- Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
- Power - Max:225 mW
- Frequency - Transition:-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:SOT-23-3 (TO-236)
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