NST856BF3T5G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):65 V
• Vce Saturation (Max) @ Ib, Ic:800mV @ 5mA, 100mA
• Current - Collector Cutoff (Max):15nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
• Power - Max:290 mW
• Frequency - Transition:100MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-1123
• Supplier Device Package:SOT-1123