NSVMMBT589LT1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):1 A
• Voltage - Collector Emitter Breakdown (Max):30 V
• Vce Saturation (Max) @ Ib, Ic:650mV @ 200mA, 2A
• Current - Collector Cutoff (Max):100nA

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 2V
• Power - Max:310 mW
• Frequency - Transition:100MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3