MJD112G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, 2A, 10
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MJD112G Datasheet
-
ECAD Model
- Share
In Stock: 107,418
Can ship immediately
Pricing:
- 1$0.22
- 75$0.1746
- 150$0.13968
- 525$0.10975
- 1,050$0.08481
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN - Darlington
- Current - Collector (Ic) (Max):2 A
- Voltage - Collector Emitter Breakdown (Max):100 V
- Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
- Current - Collector Cutoff (Max):20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
- Power - Max:1.75 W
- Frequency - Transition:25MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
Related Products
2SC4080 - NPN EPITAXIAL PLANAR S
- 1: $0.22000
3.0 A, 100 V NPN BIPOLAR POWER T
- 1: $0.23000
