MJD112-1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, 2A, 10
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet MJD112-1G Datasheet
-
ECAD Model
- Share
In Stock: 1,238,687
Can ship immediately
Pricing:
- 1$0.23
- 75$0.18423
- 150$0.14738
- 525$0.11579
- 1,050$0.08947
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:NPN - Darlington
- Current - Collector (Ic) (Max):2 A
- Voltage - Collector Emitter Breakdown (Max):100 V
- Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
- Current - Collector Cutoff (Max):20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
- Power - Max:1.75 W
- Frequency - Transition:25MHz
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package:I-PAK
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