NJVMJD32T4G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):3 A
• Voltage - Collector Emitter Breakdown (Max):40 V
• Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
• Current - Collector Cutoff (Max):50µA

• DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
• Power - Max:1.56 W
• Frequency - Transition:3MHz
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK